Materials Growth Facilities
We use an Aixtron 200 low-pressure metal-organic chemical vapor deposition (MOCVD) system for the epitaxial and heteroepitaxial growth of III-V semiconductor compounds such as GaAs, InP, InAs, etc. This reactor has been customized to host several metal-organic sources (TBA, TMGa, TMIn, TMAl, TMSb, TBP, DEZn), which allows the versatile growth of novel epitaxial layers and nanostructures (NWs). The reactor can grow compound semiconductor materials containing Ga, As, In, Al, P, and Sb. Sources of Zn and Si are also available in the reactor for doping purposes. The MOCVD system is located in the Photonics Research Center of EEE @ NTU.
The organic electronics laboratory is a state-of-the-art fabrication facility for organic devices. It comprises of a chemical preparation room and two Ar gloveboxes. Glovebox 1 is dedicated to the preparation of solutions and deposition of thin films by spin-coating; glovebox 2 hosts the instrumentation for device characterization. The two gloveboxes are also connected to a plasma chamber used for substrate cleaning and to a thermal evaporator with up to nine independent sources for the evaporation of small molecules, dielectrics and metals.
We are developing facilities for the chemical synthesis of nanostructured materials and thin film semiconductors. Here we focus on chemical deposition processes, specifically solution methods such as hydrothermal growth and spray pyrolysis for the synthesis of metal-oxide films and nanowires on conductive and flexible substrates. We aim at developing scalable, low-temperature, and low-cost methods for the integration of transparent conductive oxides in hybrid organic-inorganic devices.
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